Samsung is reportedly in the process of reworking its sixth-generation 1c DRAM design to boost yield rates and gain a competitive advantage ahead of its upcoming HBM4 process.
Samsung’s revamped 1c DRAM chip is pivotal not only for the company’s HBM4 plans but also for the overall success of its memory business. A report from ZDNet Korea highlights that the Korean tech behemoth began exploring new designs for its state-of-the-art DRAM technology in the latter half of 2024. The big move to redesign its advanced 1c DRAM aims to ensure that the forthcoming HBM processes are widely adopted within the industry, unlike earlier HBM3 models that faced significant challenges in being integrated by major players such as NVIDIA.
The report points out that Samsung’s advanced DRAM process initially fell short of the yield targets they had set, reportedly around 60% to 70%, thus stalling their path to mass production. The core of the problem was identified as the size of the 1c DRAM chip. Samsung initially zeroed in on shrinking the chip size to ramp up production volume. However, this resulted in sacrifices to process stability and consequently lower yields.
ZDNet Korea noted, “Samsung Electronics has revamped the design of its 1c DRAM, opting for a larger chip size with an increased focus on improving yield rates, aiming for the middle of this year. The company appears committed to stable, next-gen memory production even if it entails higher costs.”
For Samsung, the performance of its 1c DRAM process is vital in shaping the trajectory of its HBM4 products. With rivals like SK Hynix and Micron already advancing their designs, Samsung is in a race against time. The company’s recent struggles, particularly after the HBM3 difficulties, underscore the need for Samsung to get its 1c DRAM process aligned with industry expectations.
At present, the fate of Samsung’s sixth-generation DRAM process remains murky. Yet, there’s an air of anticipation that developments in the coming months could steer the company’s HBM4 process toward mass production by year-end.
